Acceptor compensation by dislocations re
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Muret, P. ;Wade, M.
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Article
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2006
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John Wiley and Sons
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English
β 203 KB
## Abstract This document shows that new electrically active defects can develop in the homoepitaxial layer grown on Ib diamond substrates, related to the increase of the dislocation density. Deep centres, which are able to compensate the boron acceptors, specially when the growth process allows bo