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High temperature Schottky diodes with boron-doped homoepitaxial diamond base

✍ Scribed by G.Sh. Gildenblat; S.A. Grot; C.W. Hatfield; C.R. Wronski; A.R. Badzian; T. Badzian; R. Messier


Book ID
113188242
Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
234 KB
Volume
25
Category
Article
ISSN
0025-5408

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## Abstract This document shows that new electrically active defects can develop in the homoepitaxial layer grown on Ib diamond substrates, related to the increase of the dislocation density. Deep centres, which are able to compensate the boron acceptors, specially when the growth process allows bo