Several kinds of (100) surfaces of homoepitaxial diamond films doped with boron are investigated. The valence band maximum at the surface and electronic affinity are measured using ultraviolet and X-ray photoelectron spectroscopies. In p-type doped films, resistivity measurements indicate that the b
β¦ LIBER β¦
Low-Compensated Boron-Doped Homoepitaxial Diamond Films Using Trimethylboron
β Scribed by Yamanaka, S. ;Takeuchi, D. ;Watanabe, H. ;Okushi, H. ;Kajimura, K.
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 144 KB
- Volume
- 174
- Category
- Article
- ISSN
- 0031-8965
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