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Growth of CuInSe2by metallorganic chemical vapour deposition (MOCVD): new copper precursor

✍ Scribed by S. Duchemin; M. C. Artaud; F. Ouchen; J. Bougnot; A. M. Pougnet

Publisher: Springer US
Year: 1996
Tongue: English
Weight: 567 KB
Volume: 7
Category: Article
ISSN: 0957-4522
DOI: 10.1007/bf00133116

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✦ Synopsis

Metallorganic chemical vapour deposition (MOCVD) of Cu-ln-Se ternary compounds is performed in a horizontal reactor at atmospheric pressure. A copper precursor has been specially developed for this purpose and is used around room temperature. It is hexafluoroacetylacetonato copper mixed with trimethylamine (Cu(hfa)z, NMe3). The other source materials are triethylindium (TEIn), trimethylindium (TMIn) and hydrogen selenide (HzSe). Experimental parameters are detailed and related to the film composition. Properties of thin films are also investigated in the whole range of compositions obtained.

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