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Chemical vapour deposition of thin copper films using a new metalorganic precursor

✍ Scribed by J. Goswami; L. Raghunathan; A. Devi; S. A. Shivashankar; S. Chandrasekaran

Publisher
Springer
Year
1996
Tongue
English
Weight
546 KB
Volume
15
Category
Article
ISSN
0261-8028

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✍ S. Duchemin; M. C. Artaud; F. Ouchen; J. Bougnot; A. M. Pougnet πŸ“‚ Article πŸ“… 1996 πŸ› Springer US 🌐 English βš– 567 KB

Metallorganic chemical vapour deposition (MOCVD) of Cu-ln-Se ternary compounds is performed in a horizontal reactor at atmospheric pressure. A copper precursor has been specially developed for this purpose and is used around room temperature. It is hexafluoroacetylacetonato copper mixed with trimeth