Growth of ZnS films by chemical vapor deposition of Zn[S2CN(CH3)2]2 precursor
β Scribed by Everett Y.M. Lee; Nguyen H. Tran; Robert N. Lamb
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 184 KB
- Volume
- 241
- Category
- Article
- ISSN
- 0169-4332
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## Abstract ZnS:M^2+^ (Mβ=βMn, Co, or Cu) singleβcrystal oneβdimensional nanostructures have been prepared via a simple halideβtransport chemical vapor deposition (HTCVD) process at a relatively low temperature. The obvious phase transition suggests that doping with Mn favors the formation of the h
The reactions of Zn(CF 3 )Br Β΄2 CH 3 CN, Cd(CF 3 ) 2 Β΄2 CH 3 CN or Bi(CF 3 ) 3 /AlCl 3 with tertiary amines lead to the formation of quaternary ammonium salts of the general formula [R 3 NCF 2 H]X. The reaction of 4-N,N-dimethylaminopyridine with Zn(CF 3 )Br Β΄2 CH 3 CN yields (Ndifluoromethyl)-4-N,N