𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Growth and properties of m-plane GaN on m-plane sapphire by metalorganic chemical vapor deposition

✍ Scribed by Paduano, Qing S.; Weyburne, David W.; Tomich, David H.


Book ID
120051304
Publisher
Elsevier Science
Year
2013
Tongue
English
Weight
936 KB
Volume
367
Category
Article
ISSN
0022-0248

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Study of the stacking faults in a-plane
✍ H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 596 KB

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy