Epitaxial lateral overgrowth of (1122) semipolar GaN on (1100) m-plane sapphire by metalorganic chemical vapor deposition

✍ Scribed by Ni, X.; Özgür, Ü.; Baski, A. A.; Morkoç, H.; Zhou, Lin; Smith, David J.; Tran, C. A.

• Book ID: 121083967
• Publisher: American Institute of Physics
• Year: 2007
• Tongue: English
• Weight: 579 KB
• Volume: 90
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.2735558