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Comparative study of GaN and AlN nucleation layers and their role in growth of GaN on sapphire by metalorganic chemical vapor deposition

✍ Scribed by Lorenz, K.; Gonsalves, M.; Kim, Wook; Narayanan, V.; Mahajan, S.

Book ID: 125540036
Publisher: American Institute of Physics
Year: 2000
Tongue: English
Weight: 605 KB
Volume: 77
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.1328091

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