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Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

✍ Scribed by H.P.D. Schenk; E. Frayssinet; A. Bavard; D. Rondi; Y. Cordier; M. Kennard

Book ID: 108166206
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 1024 KB
Volume: 314
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.10.170

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