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GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates

✍ Scribed by Miskys, C. R.; Kelly, M. K.; Ambacher, O.; Martı nez-Criado, G.; Stutzmann, M.


Book ID
118121994
Publisher
American Institute of Physics
Year
2000
Tongue
English
Weight
497 KB
Volume
77
Category
Article
ISSN
0003-6951

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