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GaN homoepitaxial layers grown by metalorganic chemical vapor deposition

✍ Scribed by Leszczynski, M.; Beaumont, B.; Frayssinet, E.; Knap, W.; Prystawko, P.; Suski, T.; Grzegory, I.; Porowski, S.

Book ID: 120407077
Publisher: American Institute of Physics
Year: 1999
Tongue: English
Weight: 291 KB
Volume: 75
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.124666

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