Homoepitaxy of GaN on polished bulk single crystals by metalorganic chemical vapor deposition

✍ Scribed by Ponce, F. A.; Bour, D. P.; Gotz, W.; Johnson, N. M.; Helava, H. I.; Grzegory, I.; Jun, J.; Porowski, S.

• Book ID: 118121990
• Publisher: American Institute of Physics
• Year: 1996
• Tongue: English
• Weight: 599 KB
• Volume: 68
• Category: Article
• ISSN: 0003-6951
• DOI: 10.1063/1.116230