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The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates

✍ Scribed by T. Detchprohm; K. Hiramatsu; N. Sawaki; I. Akasaki

Publisher: Elsevier Science
Year: 1994
Tongue: English
Weight: 371 KB
Volume: 137
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)91267-x

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