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Photoluminescence study of Si-doped (1 1 2̄ 0) a-plane GaN grown on (1 1̄ 0 2) r-plane sapphire by metalorganic chemical vapor deposition

✍ Scribed by H.B. Yu; H. Chen; Dongsheng Li; Y.J. Han; X.H. Zheng; Q. Huang; J.M. Zhou

No coin nor oath required. For personal study only.

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Photoluminescence study of Si-doped (1&#xa0;1&#xa0;2̄&#xa0;0) a-plane GaN grown on (1&#xa0;1̄&#xa0;0&#xa0;2) r-plane sapphire by metalorganic chemical vapor deposition