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Photoluminescence study of Si-doped (1 1 2̄ 0) a-plane GaN grown on (1 1̄ 0 2) r-plane sapphire by metalorganic chemical vapor deposition

✍ Scribed by H.B. Yu; H. Chen; Dongsheng Li; Y.J. Han; X.H. Zheng; Q. Huang; J.M. Zhou


Book ID
108165675
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
220 KB
Volume
263
Category
Article
ISSN
0022-0248

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