✦ LIBER ✦

Defect reduction in (1 1 2̄ 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers

✍ Scribed by S.R. Xu; J.C. Zhang; L.A. Yang; X.W. Zhou; Y.R. Cao; J.F. Zhang; J.S. Xue; Z.Y. Liu; J.C. Ma; F. Bao; Y. Hao

Book ID: 108166369
Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 575 KB
Volume: 327
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2011.06.013

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Photoluminescence study of Si-doped (1&#

Photoluminescence study of Si-doped (1 1 2̄ 0) a-plane GaN grown on (1 1̄ 0 2) r-plane sapphire by metalorganic chemical vapor deposition

✍ H.B. Yu; H. Chen; Dongsheng Li; Y.J. Han; X.H. Zheng; Q. Huang; J.M. Zhou 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 220 KB

Growth of nonpolar m-plane GaN (1 0

Growth of nonpolar m-plane GaN (1 0 −1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy

✍ Mitch M.C. Chou; Chenlong Chen; Jin-Wei Lu; Chu-An Li; Chuck W.C. Hsu; Calvin Li 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 607 KB

A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m-plane GaN (1 0 À 1 0) material on a closely lattice-matched (1 0 0) LiAlO 2 single crystal substrate. The surface morphologies are chara

Microstructures of GaN films grown by lo

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1̄ 2) sapphire substrates

✍ Lisen Cheng; Ze Zhang; Guoyi Zhang; Zhijian Yang 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 460 KB

Reduced-stress GaN epitaxial layers grow

Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

✍ Bablu K. Ghosh; Toru Tanikawa; Akihiro Hashimoto; Akio Yamamoto; Yoshifumi Ito 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 251 KB

Crack control in GaN grown on silicon (1

Crack control in GaN grown on silicon (1 1 1) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition

✍ Jiejun Wu; Xiuxun Han; Jiemin Li; Hongyuan Wei; Guangwei Cong; Xianglin Liu; Qin 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 229 KB

Structural and optical properties of nea

Structural and optical properties of nearly stress-free m-plane ZnO film on (1 0 0) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

✍ Hui Lin; Shengming Zhou; Hao Teng; Xiaorui Hou; Tingting Jia; Shulin Gu; Shunmin 📂 Article 📅 2009 🏛 Elsevier Science 🌐 English ⚖ 163 KB

Defect reduction in (1&#xa0;1&#xa0;2̄&#xa0;0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers

Defect reduction in (1 1 2̄ 0) nonpolar a-plane GaN grown on r-plane sapphire using TiN interlayers