✦ LIBER ✦

Growth of nonpolar m-plane GaN (1 0 −1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy

✍ Scribed by Mitch M.C. Chou; Chenlong Chen; Jin-Wei Lu; Chu-An Li; Chuck W.C. Hsu; Calvin Liu

Publisher: Elsevier Science
Year: 2011
Tongue: English
Weight: 607 KB
Volume: 316
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2010.11.160

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✦ Synopsis

A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m-plane GaN (1 0 À 1 0) material on a closely lattice-matched (1 0 0) LiAlO 2 single crystal substrate. The surface morphologies are characterized by scanning electron microscopy. Structural properties of the GaN epilayers are investigated by X-ray diffraction, and the FWHM of GaN (1 0 À 1 0) rocking curve is around 0.131. Optical and electrical properties are evaluated by photoluminescence spectroscopy, optical transmission spectra and Hall measurement. Photoluminescence spectroscopy exhibited a near band edge emission peak at 3.410 eV. The carrier concentration is (3.9 7 0.01) Â 10 18 cm À 3 .

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Growth of nonpolar m-plane GaN (1&#xa0;0&#xa0;−1&#xa0;0) single crystal on (1&#xa0;0&#xa0;0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy

✦ Synopsis

Growth of nonpolar m-plane GaN (1 0 −1 0) single crystal on (1 0 0) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy