Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1̄ 2) sapphire substrates
✍ Scribed by Lisen Cheng; Ze Zhang; Guoyi Zhang; Zhijian Yang
- Book ID
- 108342755
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 460 KB
- Volume
- 191
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
A newly designed two-step reactor which places both chemical vapor deposition (CVD) and hydride vapor phase epitaxy (HVPE) in series is proposed to grow nonpolar m-plane GaN (1 0 À 1 0) material on a closely lattice-matched (1 0 0) LiAlO 2 single crystal substrate. The surface morphologies are chara
The intermetallic superconductor magnesium diboride (MgB 2 ) is a promising candidate for use in superconducting electronic devices because its high transition temperature (T c ). These applications require the development of a high-quality film fabrication process. We report the first ever attempt