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Reduced-stress GaN epitaxial layers grown on Si(1 1 1) by using a porous GaN interlayer converted from GaAs

✍ Scribed by Bablu K. Ghosh; Toru Tanikawa; Akihiro Hashimoto; Akio Yamamoto; Yoshifumi Ito

No coin nor oath required. For personal study only.

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Reduced-stress GaN epitaxial layers grown on Si(1&#xa0;1&#xa0;1) by using a porous GaN interlayer converted from GaAs