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High-quality GaN/Si(1 1 1) epitaxial layers grown with various Al0.3Ga0.7N/GaN superlattices as intermediate layer by MOCVD

✍ Scribed by Seong-Hwan Jang; Cheul-Ro Lee


Book ID
108341911
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
241 KB
Volume
253
Category
Article
ISSN
0022-0248

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