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Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition

✍ Scribed by D.S. Li; H. Chen; H.B. Yu; X.H. Zheng; Q. Huang; J.M. Zhou

Book ID
108165736
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
278 KB
Volume
265
Category
Article
ISSN
0022-0248

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✍ H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 596 KB

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy