Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition

✍ Scribed by H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 596 KB
• Volume: 318
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.10.214

✦ Synopsis

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). Cathodoluminescence (CL) images and depth-profiling spectra show Basel stacking faults (BSFs) related emission at 3.42 eV, yellow band emission at 2.25 and 3.00 eV emission bands of the a-plane GaN. From the results of CL and transmission electron microscopy (TEM), the origin of the blue emission band was attributed to donor-acceptor pair (DAP) emission correlated with prismatic stacking faults (PSFs).