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Optimization of a-plane InN grown via MOVPE on a-plane GaN buffer layers on r-plane sapphire

✍ Scribed by Masihhur R. Laskar; Abdul Kadir; A.A. Rahman; A.P. Shah; Nirupam Hatui; M.R. Gokhale; Arnab Bhattacharya

Book ID
108166075
Publisher
Elsevier Science
Year
2010
Tongue
English
Weight
539 KB
Volume
312
Category
Article
ISSN
0022-0248

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## Abstract Structural state of nonpolar a‐plane GaN layers grown by MOVPE on r‐plane sapphire is investigated by X‐ray diffraction method. Interplanar spacings were measured in three directions and corresponding strains were determined. A crystalline perfection was studied by measurement of diffra