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Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire

✍ Scribed by A.Y. Polyakov; N.B. Smirnov; A.V. Govorkov; A.V. Markov; Q. Sun; Y. Zhang; C.D. Yerino; T.-S. Ko; I.-H. Lee; J. Han

Book ID: 108215703
Publisher: Elsevier Science
Year: 2010
Tongue: English
Weight: 487 KB
Volume: 166
Category: Article
ISSN: 0921-5107
DOI: 10.1016/j.mseb.2009.11.030

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## Abstract InGaN/GaN quantum wells (QWs) grown at identical conditions on __m__‐plane GaN and __c__‐plane sapphire substrates were characterized by several techniques, aiming to clarify the reason for different emission wavelengths often observed in similar LED structures with __m__‐ and __c__‐pla