## Abstract The strain in __a__ βplane GaN layers of different thickness grown on __r__ βplane sapphire substrates by hydride vapor phase epitaxy was studied by Xβray diffraction. The layers are found to be under compression in the growth plane and under tension in the growth direction. Therefore,
Optical and electrical properties of Si-doped ina-plane GaN grown onr-plane sapphire
β Scribed by ShengRui Xu; XiaoWei Zhou; Yue Hao; LiNan Yang; JinCheng Zhang; Wei Mao; Cui Yang; MaoShi Cai; XinXiu Ou; LinYu Shi; YanRong Cao
- Book ID
- 107356732
- Publisher
- SP Science China Press
- Year
- 2010
- Tongue
- English
- Weight
- 650 KB
- Volume
- 53
- Category
- Article
- ISSN
- 1006-9321
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## Abstract Nonpolar (11$ \bar 2 $0) __a__ βplane GaN thin films were grown on __r__ βplane (1$ \bar 1 $02) sapphire substrates by lowβpressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the __a__ βplane GaN films were investigated by means of polarized Raman sca
## Abstract We report on the optical properties of a series of nonβpolar __a__βplane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking