𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Optical and electrical properties of Si-doped ina-plane GaN grown onr-plane sapphire

✍ Scribed by ShengRui Xu; XiaoWei Zhou; Yue Hao; LiNan Yang; JinCheng Zhang; Wei Mao; Cui Yang; MaoShi Cai; XinXiu Ou; LinYu Shi; YanRong Cao


Book ID
107356732
Publisher
SP Science China Press
Year
2010
Tongue
English
Weight
650 KB
Volume
53
Category
Article
ISSN
1006-9321

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Strain ina-plane GaN layers grown onr-pl
✍ Roder, C. ;Einfeldt, S. ;Figge, S. ;Hommel, D. ;Paskova, T. ;Monemar, B. ;Haskel πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 237 KB

## Abstract The strain in __a__ ‐plane GaN layers of different thickness grown on __r__ ‐plane sapphire substrates by hydride vapor phase epitaxy was studied by X‐ray diffraction. The layers are found to be under compression in the growth plane and under tension in the growth direction. Therefore,

Polarized Raman scattering studies of no
✍ Gao, Haiyong ;Yan, Fawang ;Li, Jinmin ;Wang, Junxi ;Yan, Jianchang πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 270 KB

## Abstract Nonpolar (11$ \bar 2 $0) __a__ ‐plane GaN thin films were grown on __r__ ‐plane (1$ \bar 1 $02) sapphire substrates by low‐pressure metal organic chemical vapor deposition (MOCVD). The stress characteristics of the __a__ ‐plane GaN films were investigated by means of polarized Raman sca

The effect of indium concentration on th
✍ Badcock, T. J. ;Hao, R. ;Moram, M. A. ;Dawson, P. ;Kappers, M. J. ;Humphreys, C. πŸ“‚ Article πŸ“… 2011 πŸ› John Wiley and Sons 🌐 English βš– 158 KB

## Abstract We report on the optical properties of a series of non‐polar __a__‐plane InGaN/GaN multiple quantum well (QW) structures of constant well width and varying indium concentration. The emission spectrum is dominated by recombination at regions of the QW intersected by basal plane stacking