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Comparative Study on MOCVD Growth ofa-Plane GaN Films onr-Plane Sapphire Substrates Using GaN, AlGaN, and AlN Buffer Layers

✍ Scribed by J. N. Dai; Z. H. Wu; C. H. Yu; Q. Zhang; Y. Q. Sun; Y. K. Xiong; X. Y. Han; L. Z. Tong; Q. H. He; F. A. Ponce; C. Q. Chen


Book ID
107455558
Publisher
Springer US
Year
2009
Tongue
English
Weight
277 KB
Volume
38
Category
Article
ISSN
0361-5235

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