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Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

✍ Scribed by Paskov, P. P.; Schifano, R.; Monemar, B.; Paskova, T.; Figge, S.; Hommel, D.


Book ID
125480752
Publisher
American Institute of Physics
Year
2005
Tongue
English
Weight
172 KB
Volume
98
Category
Article
ISSN
0021-8979

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Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy