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GaN and AlGaN high-voltage rectifiers grown by metal-organic chemical-vapor deposition

โœ Scribed by Ting Gang Zhu; Uttiya Chowdhury; Michael M. Wong; Jonathan C. Denyszyn; Russell D. Dupuis


Book ID
107452765
Publisher
Springer US
Year
2002
Tongue
English
Weight
281 KB
Volume
31
Category
Article
ISSN
0361-5235

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โœ Wong, M.M. ;Chowdhury, U. ;Collins, C.J. ;Yang, B. ;Denyszyn, J.C. ;Kim, K.S. ;C ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 179 KB ๐Ÿ‘ 1 views

We report the growth, fabrication and characterization of high-quality AlGaN/GaN solar-blind p-i-n and MSM photodetectors by low-pressure metalorganic chemical vapor deposition (MOCVD). The epitaxial layers were grown on double-polished c-plane (0001) sapphire substrates to allow for back-side illum