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High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition

โœ Scribed by JunShuai Xue; Yue Hao; XiaoWei Zhou; JinCheng Zhang; ChuanKai Yang; XinXiu Ou; LinYu Shi; Hao Wang; LinAn Yang; JinFeng Zhang


Book ID
108166280
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
696 KB
Volume
314
Category
Article
ISSN
0022-0248

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Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy