Corrigendum to: “High-quality InAlN/GaN heterostructures grown by metal–organic vapor phase epitaxy” [Superlatt. Microstruct. 40 (2006) 214–218]

✍ Scribed by M. Hiroki; H. Yokoyama; N. Watanabe; T. Kobayashi

• Book ID: 108268986
• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 142 KB
• Volume: 44
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1016/j.spmi.2008.06.004