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Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

✍ Scribed by Geunho Yoo; Hyunsung Park; Donghun Lee; Hyoungjin Lim; Seunga Lee; Bohyun Kong; Hyungkoun Cho; Hyoungwon Park; Heon Lee; Okhyun Nam


Book ID
113514060
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
997 KB
Volume
11
Category
Article
ISSN
1567-1739

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Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy