✦ LIBER ✦

Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition

✍ Scribed by Jung, Mina ;Chang, Jiho ;Lee, Hyunjae ;Ha, Jun-seok ;Park, Jin-sub ;Park, Seungwhan ;Fujii, Katsushi ;Yao, Takafumi ;Kil, Gyung-suk ;Lee, Seogwoo ;Cho, Myungwhan ;Whang, Sungmin ;Seo, Yong-gon

Book ID: 127133161
Publisher: AVS (American Vacuum Society)
Year: 2010
Tongue: English
Weight: 716 KB
Volume: 28
Category: Article
ISSN: 1520-8567
DOI: 10.1116/1.3388889

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Anisotropy of a-plane GaN grown on r-pla

Anisotropy of a-plane GaN grown on r-plane sapphire by metalorganic chemical vapor deposition

✍ D.S. Li; H. Chen; H.B. Yu; X.H. Zheng; Q. Huang; J.M. Zhou 📂 Article 📅 2004 🏛 Elsevier Science 🌐 English ⚖ 278 KB

Study of the stacking faults in a-plane

Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal–organic chemical vapor deposition

✍ H. Fang; L.W. Sang; W.X. Zhu; H. Long; T.J. Yu; Z.J. Yang; G.Y. Zhang 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 596 KB

Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy

Growth and properties of m-plane GaN on

Growth and properties of m-plane GaN on m-plane sapphire by metalorganic chemical vapor deposition

✍ Paduano, Qing S.; Weyburne, David W.; Tomich, David H. 📂 Article 📅 2013 🏛 Elsevier Science 🌐 English ⚖ 936 KB

Emission properties of a-plane GaN grown

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

✍ Paskov, P. P.; Schifano, R.; Monemar, B.; Paskova, T.; Figge, S.; Hommel, D. 📂 Article 📅 2005 🏛 American Institute of Physics 🌐 English ⚖ 172 KB

Characterization of a-plane GaN layers g

Characterization of a-plane GaN layers grown on patterned r-sapphire substrate by metal organic chemical vapor deposition

✍ Geunho Yoo; Hyunsung Park; Donghun Lee; Hyoungjin Lim; Seunga Lee; Bohyun Kong; 📂 Article 📅 2011 🏛 Elsevier Science 🌐 English ⚖ 997 KB

Properties of N-polar GaN films and AlGa

Properties of N-polar GaN films and AlGaN/GaN heterostructures grown on (111) silicon by metal organic chemical vapor deposition

✍ Keller, S.; Dora, Y.; Wu, F.; Chen, X.; Chowdury, S.; DenBaars, S. P.; Speck, J. 📂 Article 📅 2010 🏛 American Institute of Physics 🌐 English ⚖ 665 KB