Germanium effect on oxygen-related defects in Czochralski silicon

✍ Scribed by Yang, Deren ;Chen, Jiahe ;Li, Hong ;Ma, Xiangyang ;Tian, Daxi ;Li, Liben ;Que, Duanlin

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 249 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200564507

✦ Synopsis

Abstract

The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germanium‐doped CZ (GCZ) silicon is presented. The formation of oxygen precipitates during CZ silicon growth can be improved by germanium, and the oxygen precipitation during thermal cycles can be enhanced, so that the internal gettering (IG) ability of GCZ silicon wafers for metallic impurities is improved. Meanwhile, the morphology of oxygen precipitates can be changed in GCZ silicon. Thermal donors (TDs) can be suppressed by germanium doping as the result of the reaction between germanium and point defects, while new donors (NDs) can be strongly enhanced in GCZ silicon because of a process associated with the nucleation enhancement of oxygen precipitates with germanium doping. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)