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Defects in germanium-doped Czochralski silicon

✍ Scribed by Yang, Deren

Publisher
John Wiley and Sons
Year
2005
Tongue
English
Weight
176 KB
Volume
202
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Germanium doping of Czochralski (CZ) silicon has attracted attention in recent years. It is pointed out that germanium doping can result in denser voids with small size, which can be eliminated easily by annealing at high temperature, and may improve the gate oxide integrity (GOI) of semiconductor devices. Meanwhile, oxygen precipitation in CZ silicon can be enhanced by germanium, so that the internal gettering (IG) ability of wafers is improved. In addition, it is reported that germanium can suppress the formation of thermal donors (TDs). Thus, it is believed that the germanium‐doped CZ (GCZ) silicon can be used as the substrate of ultra‐large scale integrated (ULSI) circuits, which have the high quality subsurface layer, the high IG ability, and the stable electrical property. (Β© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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✍ Yang, Deren ;Chen, Jiahe ;Li, Hong ;Ma, Xiangyang ;Tian, Daxi ;Li, Liben ;Que, D πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 249 KB

## Abstract The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germanium‐doped CZ (GCZ) silicon is presented. The formation of oxygen