In order to investigate the gap states caused by the oxygen precipitation, we performed deep level transient spectroscopy measurements on silicon crystals containing various types of oxygen precipitates. For all types of the oxygen precipitates, a new signal in the gap-state density was observed at
Germanium-doped Czochralski silicon: Oxygen precipitates and their annealing behavior
β Scribed by Jiahe Chen; Deren Yang; Hong Li; Xiangyang Ma; Duanlin Que
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 298 KB
- Volume
- 9
- Category
- Article
- ISSN
- 1369-8001
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