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Defects in annealed Czochralski Silicon

โœ Scribed by Salisbury, I. G.


Publisher
John Wiley and Sons
Year
1980
Tongue
English
Weight
234 KB
Volume
61
Category
Article
ISSN
0031-8965

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Defects in germanium-doped Czochralski s
โœ Yang, Deren ๐Ÿ“‚ Article ๐Ÿ“… 2005 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 176 KB

## Abstract Germanium doping of Czochralski (CZ) silicon has attracted attention in recent years. It is pointed out that germanium doping can result in denser voids with small size, which can be eliminated easily by annealing at high temperature, and may improve the gate oxide integrity (GOI) of se