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Influence of annealing during growth on defect formation in Czochralski silicon

โœ Scribed by Hideo Nakanishi; Hiroki Kohda; Keigo Hoshikawa


Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
441 KB
Volume
61
Category
Article
ISSN
0022-0248

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Influence of Dopants on Defect Formation
โœ Z. Liliental-Weber; J. Jasinski; M. Benamara; I. Grzegory; S. Porowski; D.J.H. L ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 250 KB ๐Ÿ‘ 2 views

The influence of p-dopants (Mg and Be) on the structure of GaN has been studied using Transmission Electron Microscopy (TEM). Bulk GaN : Mg and GaN : Be crystals grown by a high pressure and high temperature process and GaN : Mg grown by metal-organic chemical-vapor deposition (MOCVD) have been stud