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Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

โœ Scribed by Misiuk, A.


Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
167 KB
Volume
171
Category
Article
ISSN
0031-8965

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g-irradiation induced defects ( 60 Co, dose of 3 ร‚ 10 19 cm ร€2 ) in n-GaN epilayers with a carrier concentration of 10 17 cm ร€3 (slightly doped) and 10 18 cm ร€3 (heavily doped) grown by low-pressure MOCVD on (0001) sapphire substrates have been investigated. The g-irradiation decreases the electron