Effect of Annealing on Defects in As-Gro
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N.M. Shmidt; D.V. Davydov; V.V. Emtsev; I.L. Krestnikov; A.A. Lebedev; W.V. Lund
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Article
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1999
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John Wiley and Sons
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English
โ 123 KB
g-irradiation induced defects ( 60 Co, dose of 3 ร 10 19 cm ร2 ) in n-GaN epilayers with a carrier concentration of 10 17 cm ร3 (slightly doped) and 10 18 cm ร3 (heavily doped) grown by low-pressure MOCVD on (0001) sapphire substrates have been investigated. The g-irradiation decreases the electron