Effect of Annealing on Defects in As-Grown and γ-Ray Irradiated n-GaN Layers
✍ Scribed by N.M. Shmidt; D.V. Davydov; V.V. Emtsev; I.L. Krestnikov; A.A. Lebedev; W.V. Lundin; D.S. Poloskin; A.V. Sakharov; A.S. Usikov; A.V. Osinsky
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 123 KB
- Volume
- 216
- Category
- Article
- ISSN
- 0370-1972
No coin nor oath required. For personal study only.
✦ Synopsis
g-irradiation induced defects ( 60 Co, dose of 3 Â 10 19 cm À2 ) in n-GaN epilayers with a carrier concentration of 10 17 cm À3 (slightly doped) and 10 18 cm À3 (heavily doped) grown by low-pressure MOCVD on (0001) sapphire substrates have been investigated. The g-irradiation decreases the electron concentration (n) for the slightly doped epilayers, while it increases that for the heavily doped epilayers. At the same time, the g-irradiation causes a decrease in the electron mobility (m) for all epilayers. For heavily doped epilayers, the concentration increase continues during annealing at temperatures up to 250 C and it has been associated with the activation of neutral complexes. Two electron traps with E 0X155 eV and 0.95 eV appeared in the g-irradiated slightly doped epilayers. The values of n and m have restored their original values, which have been measured in the as-grown epilayers, after annealing at 550 C.