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Oxygen precipitates in short-time annealed Czochralski silicon

โœ Scribed by A. Borghesi; B. Pivac; A. Sassella


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
653 KB
Volume
126
Category
Article
ISSN
0022-0248

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Gap States Caused by Oxygen Precipitates
โœ M. Koizuka; H. Yamada-Kaneta ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 138 KB ๐Ÿ‘ 2 views

In order to investigate the gap states caused by the oxygen precipitation, we performed deep level transient spectroscopy measurements on silicon crystals containing various types of oxygen precipitates. For all types of the oxygen precipitates, a new signal in the gap-state density was observed at