## Abstract Germanium doping of Czochralski (CZ) silicon has attracted attention in recent years. It is pointed out that germanium doping can result in denser voids with small size, which can be eliminated easily by annealing at high temperature, and may improve the gate oxide integrity (GOI) of se
Flow pattern defects in germanium-doped Czochralski silicon crystals
β Scribed by Wubing Xu; Jiahe Chen; Xiangyang Ma; Deren Yang; Longfei Gong; Daxi Tian
- Publisher
- Springer
- Year
- 2010
- Tongue
- English
- Weight
- 842 KB
- Volume
- 104
- Category
- Article
- ISSN
- 1432-0630
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## Abstract The behaviours of germanium doped in Czochralski (CZ) silicon have attracted considerable attention in recent years. In this article, a review concerning recent processes in the study about oxygen related defects in germaniumβdoped CZ (GCZ) silicon is presented. The formation of oxygen
## Abstract A dislocationβfree silicon single crystal doped with 10^20^ cm^β3^ germanium (Ge) has been grown using the Czochralski (CZ) growth technique. The Ge concentration in the seedβend and tangβend of the crystal was 8Γ10^19^cm^β3^and 1.6Γ10^20^ cm^β3^, respectively. The effective segregation