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Effect of light germanium doping on thermal donors in Czochralski silicon wafers

✍ Scribed by Can Cui; Deren Yang; Xiangyang Ma; Ming Li; Duanlin Que

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
137 KB
Volume
9
Category
Article
ISSN
1369-8001

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✍ Biao Wang; Xinpeng Zhang; Xiangyang Ma; Deren Yang πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 545 KB

Oxygen precipitation (OP) behaviors in heavily arsenic-doped Czochralski silicon wafers without and with prior rapid thermal processing at 1100-1250 1C, subjected to subsequent two-step anneal of 450, 650 and 800 1C/4 h+1000 1C/16 h, have been investigated. It is found that the prior RTP at 1250 1C