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Effect of nitrogen doping on denuded zone formed by rapid thermal process in Czochralski silicon wafer

โœ Scribed by Can Cui; Deren Yang; Xiangyang Ma; Ruixin Fan; Liben Li; Duanlin Que


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
250 KB
Volume
376-377
Category
Article
ISSN
0921-4526

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Oxygen precipitation (OP) behaviors in heavily arsenic-doped Czochralski silicon wafers without and with prior rapid thermal processing at 1100-1250 1C, subjected to subsequent two-step anneal of 450, 650 and 800 1C/4 h+1000 1C/16 h, have been investigated. It is found that the prior RTP at 1250 1C