Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

✍ Scribed by Biao Wang; Xinpeng Zhang; Xiangyang Ma; Deren Yang

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 545 KB
• Volume: 318
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/j.jcrysgro.2010.11.016

✦ Synopsis

Oxygen precipitation (OP) behaviors in heavily arsenic-doped Czochralski silicon wafers without and with prior rapid thermal processing at 1100-1250 1C, subjected to subsequent two-step anneal of 450, 650 and 800 1C/4 h+1000 1C/16 h, have been investigated. It is found that the prior RTP at 1250 1C substantially enhances OP in each two-step anneal. Such enhancement effect exhibits most significantly in the two-step anneal with the nucleation at 800 1C. However, in order to form the highest density of oxygen precipitates, the most desirable nucleation temperature is 650 1C in both cases without and with prior RTP. The OP nucleation mechanisms operating in the three low temperatures as mentioned above have been tentatively discussed.