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The effect of carbon on thermal donor formation in heat treated pulled silicon crystals

✍ Scribed by A.R. Bean; R.C. Newman


Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
945 KB
Volume
33
Category
Article
ISSN
0022-3697

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## Abstract The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at __T__=450Β°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐kno