Oxygen agglomeration and formation of oxygen-related thermal donors in heat-treated silicon

✍ Scribed by V. V. Emtsev Jr.; C. A. J. Ammerlaan; V. V. Emtsev; G. A. Oganesyan; A. Misiuk; B. Surma; A. Bukowski; C. A. Londos; M. S. Potsidi

• Publisher: John Wiley and Sons
• Year: 2003
• Tongue: English
• Weight: 114 KB
• Volume: 38
• Category: Article
• ISSN: 0232-1300
• DOI: 10.1002/crat.200310049

✦ Synopsis

Abstract

The characteristic features of production processes of thermal donors in Czochralski grown silicon heat treated at T=450°C under hydrostatic pressures of about 1 GPa are studied. Two families of oxygen‐related donors are formed under compressive stress. The first one is the well‐known thermal double donors whose production rate is increased by a factor of five as compared with that observed at atmospheric pressure. Along with them, new thermal donors with similar energy states are also produced. This family was found to be a dominant contributor to the thermal donors formed under compressive stress. The features of formation processes of both kinds of thermal donors are briefly discussed.