Annihilation Studies of Oxygen-Related New Donors in Cz-Si
✍ Scribed by D. Karg; A. Voigt; G. Pensl; M. Schulz; H.P. Strunk; W. Zulehner
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 199 KB
- Volume
- 210
- Category
- Article
- ISSN
- 0370-1972
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✦ Synopsis
The annihilation kinetics of new oxygen donors (NDs) has been studied. The ND and interstitial oxygen concentration as well as the energy distribution of ND states are determined subsequent to annealing steps with various duration (2 s to 250 h) and at temperatures ranging from 875 to 1025 C. The annihilation occurs in two steps: At the temperatures used, energetically shallow ND states (E C ± ± E 0.1 eV) annihilate within 15 min, while the deeper ND states require annealing times up to 250 h. The thermal activation energy DE A for the annihilation of shallow ND states is determined to be equal to (3.03 AE 0.20) eV.