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Oxygen related defects in germanium

✍ Scribed by P. Clauws

Publisher: Elsevier Science
Year: 1996
Tongue: English
Weight: 656 KB
Volume: 36
Category: Article
ISSN: 0921-5107
DOI: 10.1016/0921-5107(95)01255-9

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✦ Synopsis

Spectroscopic investigations during the last decade have resulted in a detailed picture of oxygen related defects in germanium such as oxygen interstitials and thermal donors. The results are summarized and compared with those of equivalent centres in silicon. The many similarities suggest that unified models for the major oxygen defects in the two semiconductors may apply.

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