Properties and identification of the oxygen-related radiation defects in silicon

✍ Scribed by Nikolai Yarykin; Jörg Weber

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 150 KB
• Volume: 401-402
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2007.09.004

✦ Synopsis

Properties of the recently reported deep-level radiation defects in oxygen-rich silicon (the M-center in p-type Si with the DLTS levels at E v þ 0:36 and E v þ 0:12 eV, and the X-center in n-type Si with the level at E c À 0:11 eV, respectively) are investigated by means of DLTS and IR absorption. With a pre-irradiation heat treatment the linear correlation between the amount of oxygen dimers and the X-and M-center concentrations is established, indicating the oxygen dimer as the precursor of both radiation defects. The annihilation rates of the X-and M-centers in different charge states are measured in the temperature range of 295-350 K. The introduction rates and thermal stabilities of the M-and X-centers are found to be strongly different, which makes it difficult to correlate these levels with the same defect.