Evolution of radiation-induced carbon–oxygen-related defects in silicon upon annealing: LVM studies

✍ Scribed by L.I. Murin; J.L. Lindström; G. Davies; V.P. Markevich

• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 250 KB
• Volume: 253
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2006.10.029