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Influence of oxygen and carbon on the generation and annihilation of radiation defects in silicon

✍ Scribed by M.-A. Trauwaert; J. Vanhellemont; H.E. Maes; A.-M. Van Bavel; G. Langouche; A. Stesmans; P. Clauws

Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
273 KB
Volume
36
Category
Article
ISSN
0921-5107

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